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| 4AC14 Silicon NPN Triple Diffused Application Low frequency power amplifier Outline SP-10 3 2 4 ID ID 9 8 ID 1, 10 Emitter 2, 4, 6, 8 Base 3, 5, 7, 9 Collector ID 10 5 1 1 7 10 6 4AC14 Absolute Maximum Ratings (for each device, Ta = 25C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Diode current Collector power dissipation Symbol VCBO VCEO VEBO IC I C(peak) ID PC * 1 1 Ratings 150 150 7 5 10 5 4 28 150 -55 to +150 Unit V V V A A A W C C PC * (TC = 25C) Junction temperature Storage temperature Note: 1. 4 devices operation. Tj Tstg Electrical Characteristics (for each device, Ta = 25C) Item Symbol Min 150 150 7 -- -- 1000 -- -- -- Typ -- -- -- -- -- -- -- -- -- Max -- -- -- 10 10 20000 1.5 2.0 3.5 V V V Unit V V V A Test conditions I C = 0.1 mA, IE = 0 I C = 0.2 A, L = 20 mHz, RBE = I E = 50 mA, IC = 0 VCB = 120 V, IE = 0 VCE = 120 V, RBE = VCE = 3 V, IC = 3 A*1 I C = 3 A, IB = 6 mA*1 I C = 3 A, IB = 6 mA*1 ID = 5 A Collector to emitter breakdown V(BR)CBO voltage Collector to emitter sustain voltage Emitter to base breakdown voltage Collector cutoff current VCEO(SUS) V(BR)EBO I CBO I CEO DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage C to E diode forward current Note: 1. Pulse test. hFE VCE(sat) VBE(sat) VD 2 4AC14 Maximum Collector Dissipation Curve 6 Collector power dissipation Pc (W) 4 device operation Maximum Collector Dissipation Curve Collector power dissipation Pc (W) 3 device operation 4 2 device operation 1 device operation 2 30 4 device operation 3 device operation 20 2 device operation 10 0 50 100 Ambient temperature Ta (C) 150 1 device operation 0 50 100 Case temperature TC (C) 150 Note: Collector power dissipation of each devices is identical. Area of Safe Operation 100 iC (peak) 10 PW s s 1m 0m =1 Typical Output Characteristics 5 4.5 4 3.5 3 2.5 Collector current IC (A) Collector current IC (A) 4 2 1.5 IC (max) 1.0 3 DC (T O C = pe 25 ratio C n ) 2 1 mA IB = 0 TC = 25C 0 1 2 3 4 5 Collector to emitter voltage VCE (V) 0.1 Ta = 25C 1 shot pulse 0.01 0.3 1.0 3.0 10 30 100 300 Collector to emitter voltage VCE (V) 1 3 4AC14 Collector to emitter saturation voltage VCE (sat) (V) DC Current Transfer Ratio vs. Collector Current 10,000 DC current transfer ratio hFE Collector to Emitter Saturation Voltage vs. Collector Current 10 1,000 C 75 a = C T5 2 C 5 -2 3.0 Ta = -25C 1.0 25C 75C 0.3 lC = 500 lB 0.1 0.1 0.3 1.0 3.0 Collector current IC (A) 10 100 10 0.1 VCE = 3 V 0.3 1.0 3.0 Collector current IC (A) 10 Base to emitter saturation voltage VBE (sat) (V) Base to Emitter Saturation Voltage vs. Collector Current 10 Ta = -25C Collector current IC (A) 3.0 25C 75C 5 Typical Transfer Characteristics Ta = -25C 4 25C 75C 3 1.0 2 0.3 lC = 500 lB 0.1 0.1 0.3 1.0 3.0 Collector current IC (A) 10 1 VCE = 3 V 0 0.4 0.8 1.2 1.6 Base to emitter voltage VBE (V) 2.0 4 4AC14 Transient Thermal Resistance Thermal resistance j-c (C/W) 10 10 ms 0 to 1 s Typical Characteristics of Emitter to Collector Diode 5 1.0 Diode current ID (A) TC = 25C 4 0.1 10 s to m 10 s 3 2 1 TC = 25C 0 0.4 0.8 1.2 1.6 2.0 Emitter to collector diode forward voltage VECF (V) 0.02 0.01 0.01 0.1 0.1 Time t 1.0 1.0 10 (s) 10 (ms) Unit: mm 26.5 0.3 10.0 0.3 4.0 0.2 2.5 1 1.82 2.54 1.4 1.2 10 0.55 10.5 0.5 1.5 0.2 0.55 0.1 1 2 3 4 5 6 7 8 9 10 Pin No. Electrode 1 E 2 B 3 C 4 B 5 C 6 B 7 C 8 B 9 C 10 E Note: B: Base C: Collector E: Emitter 5 Unit: mm 26.5 0.3 4.0 0.2 10.0 0.3 2.5 1.82 2.54 1.4 0.55 0.1 10.5 0.5 1.5 0.2 0.55 -0.06 +0.1 1 2 3 4 5 6 7 8 9 10 Hitachi Code JEDEC EIAJ Weight (reference value) SP-10 -- -- 2.9 g Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party's rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi's sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 URL NorthAmerica : http:semiconductor.hitachi.com/ Europe : http://www.hitachi-eu.com/hel/ecg Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm Asia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htm Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm Japan : http://www.hitachi.co.jp/Sicd/indx.htm For further information write to: Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe GmbH Electronic components Group Dornacher Strae 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 778322 Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: <886> (2) 2718-3666 Fax: <886> (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: <852> (2) 735 9218 Fax: <852> (2) 730 0281 Telex: 40815 HITEC HX Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan. |
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